发明名称 SURFACE EMITTING SEMICONDUCTOR LASER ELEMENT AND SURFACE EMITTING SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser element and a surface emitting semiconductor laser element manufacturing method, which inhibit a complicated manufacturing process when compared to the case of providing an antioxidant structure on a lateral face of a surface emitting semiconductor laser element.SOLUTION: A surface emitting semiconductor laser element (10) comprises: a substrate (12); a semiconductor layer including a first conductivity type first semiconductor multilayer film (16) formed on the substrate (12), an active region (24) and a second conductivity type second semiconductor multilayer film (26) which constitutes a resonator with the first semiconductor multilayer (16); and an antioxidant structure (60) including a trench (T2) formed along at least a part of an outer periphery of the semiconductor layer and an antioxidant part (34) formed on a surface of the trench (T2).SELECTED DRAWING: Figure 1
申请公布号 JP2016082199(A) 申请公布日期 2016.05.16
申请号 JP20140215421 申请日期 2014.10.22
申请人 FUJI XEROX CO LTD 发明人 HAYAKAWA JUNICHIRO;KUMEI MASAYA;MURAKAMI AKEMI;KONDO TAKASHI;TAKEDA KAZUTAKA;SAKURAI ATSUSHI
分类号 H01S5/183;H01S5/42 主分类号 H01S5/183
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