REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, AND METHOD FOR INSPECTING AND PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for inspecting and producing an EUV mask blank capable of distinguishing phase defects and amplitude defects and detecting even amplitude defects of small sizes.SOLUTION: There is provided a method for inspecting a reflective mask blank for EUV lithography, which comprises: a first defect distribution storing step of detecting an in-plane distribution of defects in a multilayer reflective film 12 by applying EUV light to the surface of the multilayer reflective film 12 at a stage where the multilayer reflective film 12 is formed on a substrate 11 and storing the detected first defect in-plane distribution data; a second defect distribution storing step of detecting an in-plane distribution of defects from an absorption layer 14 by applying light having a wavelength of from 150 to 600 nm to the surface of the absorption layer 14 at a stage where the absorption layer 14 is formed on the multilayer reflective film 12 and storing the detected second defect in-plane distribution data; and a defect distinguishing step of distinguishing phase defects and amplitude defects in the reflective mask blank for EUV lithography by comparison between the first defect in-plane distribution data and the second defect in-plane distribution data.SELECTED DRAWING: Figure 1