BONDED WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which achieves excellent in-plane film thickness uniformity and excellent surface roughness of a thin film of the bonded wafer, and which can manufacture a bonded wafer without congestion of LPD (Light Point Defects) and slip dislocation.SOLUTION: In a bonded wafer manufacturing method which comprises the steps of: implanting a gas ion such as a hydrogen ion from a surface of a bond wafer to form an ion implantation layer inside the wafer; bonding the ion implanted surface of the bond wafer and a surface of a base wafer directly or via an insulation film; separating the bond wafer at the ion implantation layer to make a bonded wafer having a thin film; and performing RTA (Rapid Thermal Annealing) treatment under a hydrogen gas-containing atmosphere to flatten a surface of the thin film, the RTA treatment is performed at a temperature not less than 1100°C and not more than 1250°C. The bonded wafer manufacturing method further comprises the steps of: performing sacrificial oxidation; and subsequently performing CMP (Chemical Mechanical Polishing) with machining allowance of 30-80 nm on the surface of the thin film.SELECTED DRAWING: Figure 1