| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for industrially advantageously manufacturing a conductive lamination structure and a crystalline oxide semiconductor film that are advantageous to a vertical semiconductor device.SOLUTION: After a crystalline oxide semiconductor film that has a corundum structure and that contains a crystalline oxide semiconductor as a main component is laminated on a substrate, the substrate is removed from the crystalline oxide semiconductor film by using a conductive adhesive agent and a conductive substrate or by using a laser. Thereby, a conductive lamination structure and the crystalline oxide semiconductor film consisting of the crystalline oxide semiconductor film, the conductive adhesive agent and the conductive substrate, are manufactured.SELECTED DRAWING: None |
