| 摘要 |
The present invention relates to a nonvolatile memory device to allow a detection voltage signal to precede a power on reset signal at all times. The present invention may provide a nonvolatile memory device which includes a power on reset signal generation part which receives a power voltage and outputs a power on reset signal which changes according to the level of the power voltage, and a discharging signal generation part which generates a discharging signal for discharging a word line at a point previously to the activation point of the power on reset signal, when the power voltage decreases. |
