VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A method of manufacturing a vertical memory device includes forming an opening part for a common source line which penetrates a mold structure formed on the cell region of a substrate and is extended to a first direction vertical to the upper surface of the substrate, forming a peripheral circuit contact hole which penetrates a mold protection layer formed on the peripheral circuit region of the substrate and is extended to the first direction, and forming contact plugs in the peripheral circuit contact hole and the opening part for a common source line. So, the reliability of the vertical memory device can be improved.