| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of abnormal discharge.SOLUTION: The manufacturing method of a thin film transistor substrate includes: a step (S20), for starting discharge in a state where an ashing gas for ashing a resist pattern formed above a large area substrate and an inert gas are introduced into a vacuum space in which a large area substrate having an area greater than or equal to a predetermined area is disposed; and a step (S50), for ashing a resist pattern with plasma generated by discharge in a state where the ashing gas is introduced in the space.SELECTED DRAWING: Figure 8 |
