| 摘要 |
The present invention is to provide a wafer processing method capable of reliably dividing a wafer formed with multiple devices on the surface of a single crystal substrate having an off angle along a division-planned line. The wafer processing method to have the surface of a single crystal substrate having an off angle divided by multiple division-planned lines, and to have devices formed in multiple areas divided by the multiple division-planned lines comprises: a numerical aperture (NA) setting process of setting a numerical aperture (NA) of a condenser lens for condensing a pulse laser light beam to make a value obtained by dividing the numerical aperture (NA) of the condenser lens by a refractive index (N) of the single crystal substrate, to be in a range of 0.05-0.2; a shield tunnel forming process of placing a focal point of the pulse layer light beam at a desired position from the back surface of the single crystal substrate, emitting the pulse layer light beam along the division-planned line, and forming a thin hole and an amorphous shield tunnel for shielding the thin hole from the focal point placed on the single crystal substrate along the division-planned line; and a wafer dividing process of applying an external force to the wafer after the shield tunnel forming process and dividing the wafer into multiple devices along the division-planned line formed with the shield tunnel. |
