| 摘要 |
The present invention relates to an apparatus and a method for treating a substrate. The method, which is to treat a thin film formed on the substrate by etching, comprises the following steps: supplying, to a treating liquid nozzle, each of cationic water and anionic water which are decomposed from treating liquid; supplying, by means of the treating liquid nozzle, the cationic water and the anionic water to the thin film; and mixing the cationic water and the anionic water while they are supplied to the substrate. Thus, maintenance of a high temperature state is possible by heat emission from the treating liquid. |
