WAVELENGTH CONVERTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a wavelength conversion device and a method for manufacturing the same. The wavelength conversion device according to the present invention comprises: a first type nitride semiconductor block which is a nitride semiconductor including four types of elements including Ga and N and polarized in a first direction; and a second type nitride semiconductor block which is a nitride semiconductor including four types of elements including Ga and N, in contact with the first type nitride semiconductor block, and polarized in a second direction opposite to the polarization direction of the first type nitride semiconductor block. The second type nitride semiconductor block is in contact with the side surface of the first type nitride semiconductor block to form a cross-polarization structure. A second harmonic wave is generated from incident light which is incident on the first type nitride semiconductor block to transmit through the first type nitride semiconductor block and the second type nitride semiconductor block. Therefore, the wavelength conversion device of the present invention can realize quasi-phase matching by forming a structure (cross-polarization structure) in which polarization varies alternately in a direction perpendicular to the traveling direction of the light through the InAlGaN-based nitride semiconductor and can generate UV laser by generating the second harmonic wave in a wider wavelength range.