| 发明名称 |
METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME |
| 摘要 |
A method of forming a metal oxide layer and a magnetic memory device includes a post-oxidation process in which a process cycle is performed at least once, which includes depositing a metal layer on a magnetic layer and oxidizing the metal layer. |
| 申请公布号 |
US2016133831(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514919718 |
申请日期 |
2015.10.21 |
| 申请人 |
KIM Ki Woong;PARK Yongsung;LEE Yunjae;LEE Joonmyoung;LIM Woo Chang |
发明人 |
KIM Ki Woong;PARK Yongsung;LEE Yunjae;LEE Joonmyoung;LIM Woo Chang |
| 分类号 |
H01L43/12;C23C14/58;C23C14/16;C23C14/18;C23C14/34;C23C14/08 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an interface perpendicular magnetic anisotropic (IPMA) magnetic tunnel junction including a magnetic layer and a tunnel insulating layer,
wherein forming the tunnel insulating layer comprises sequentially performing a post-oxidation process and a stabilizing process, and the post-oxidation process comprises performing at least once a process cycle, the process cycle comprising depositing a metal layer on the magnetic layer and oxidizing the metal layer. |
| 地址 |
Hwaseong-si KR |
