High-Power led lamp cooling device and method for manufacturing the same

摘要

A high-power LED lamp cooling device and its manufacturing method, which includes: manufacturing a semiconductor crystal bar in advance into cone-shaped crystal bar with one end having large diameter and the other having small diameter, making color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; cutting and pelletizing the conical surface to obtain polygonal cylindrical N-type or P-type semiconductor elements, arranging them in a matrix form between two beryllium-oxide ceramic chips provided with conductive circuits, connecting head end of N-type semiconductor elements to tail end of the P-type semiconductor elements in series to manufacture high-power LED lamp cooling device. The high-power LED lamp cooling device can achieve: good cooling effect, high working efficiency, low energy consumption and capable of reducing light failure of LED lamp, and prolonging service life of the high-power LED lamp.

主权项

1. A method for manufacturing a high-power LED lamp cooling device, comprising using an N-type semiconductor element and a P-type semiconductor element as a cooling component of the high-power LED lamp cooling device, and comprising: when the N-type semiconductor element and the P-type semiconductor element are used as cooling component of the high-power LED lamp cooling device, manufacturing a semiconductor crystal bar used for manufacturing the N-type semiconductor elements or the P-type semiconductor elements in advance into a cone-shaped crystal bar, of which one end has a large diameter and the other end has a small diameter, cutting the cone-shaped semiconductor crystal bar into slices to obtain wafers with the same thickness, the small-diameter end of the wafer being the head end and the large-diameter end being the tail end, and then making a color mark on the tail end surface of each wafer; and then cutting and pelletizing the conical surface of each wafer to the same polygonal cylindrical shape, the polygonal cylindrical semiconductor is the N-type semiconductor elements or the P-type semiconductor elements with a head end and a tail end, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting each column of N-type semiconductor elements to the P-type semiconductor elements in series mutually, so that the head end of each column of N-type semiconductor elements in series is connected to the tail end of the P-type semiconductor elements or the tail end of each column of N-type semiconductor elements is connected to the head end of the P-type semiconductor elements.