| 发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP |
| 摘要 |
An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region. |
| 申请公布号 |
US2016133794(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614987905 |
申请日期 |
2016.01.05 |
| 申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Mandl Martin;Strassburg Martin;Kölper Christopher;Pfeuffer Alexander F.;Rode Patrick |
| 分类号 |
H01L33/44;H01L33/14;H01L27/15;H01L33/20;H01L33/60;H01L33/32 |
主分类号 |
H01L33/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another; and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region. |
| 地址 |
Regensburg DE |
