发明名称 |
DOPING ENGINEERED HOLE TRANSPORT LAYER FOR PEROVSKITE-BASED DEVICE |
摘要 |
An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer. |
申请公布号 |
WO2016072092(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
WO2015JP05541 |
申请日期 |
2015.11.05 |
申请人 |
OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION |
发明人 |
QI, YABING;JUNG, MIN-CHERL;RUIZ RAGA, SONIA |
分类号 |
H01L51/44;H01L51/46;H01L51/48 |
主分类号 |
H01L51/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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