| 摘要 |
PROBLEM TO BE SOLVED: To provide a W-Ti sputtering target which provides small variation of Fe concentration and an even etching rate in depositing a W-Ti film.SOLUTION: A W-Ti sputtering target includes Ti of 5 mass% or more and 20 mass% or less, an Fe of 25 mass ppm or more and 100 mass ppm or less, and a rest of W and an inevitable impurity, the sputtering target satisfying a relation of (Fe-Fe)/(Fe+Fe)≤0.25, wherein when an Fe concentration is measured at multiple points within a target surface, a measured maximum Fe concentration is defined as Fe, and a measured minimum Fe concentration is defined as Fe.SELECTED DRAWING: None |
