REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUNCTION (MTJ) ETCH

摘要

A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask.

主权项

1. A method of fabricating a magnetic tunnel junction (MTJ) apparatus, comprising:
conformally depositing a first spacer layer on a first conductive hard mask, on a first electrode layer, and on magnetic layers of the MTJ, a first portion of the first spacer layer being deposited on sidewalls of the first conductive hard mask and a second portion of the spacer layer being deposited on a surface of the first conductive hard mask; selectively removing the second portion of the first spacer layer to create a recess within a dielectric layer, the recess being aligned with the first portion of the first spacer layer; and filling the recess with a conductive material to form a second conductive hard mask on the first portion of the first spacer layer and on the first conductive hard mask.