SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.

主权项

1. A semiconductor device, comprising:
a semiconductor layer that is a first conductivity type semiconductor layer; a well region that is a second conductivity type well region formed on a surface layer portion of the semiconductor layer and that has a channel region defined therein; a source region that is a first conductivity type source region formed on a surface layer portion of the well region and that includes a first region defined adjacent to the well region and a second region defined adjacent to the first region; a gate insulating film formed on the semiconductor layer and having defined therein:
a first portion that contacts the first region of the source region;a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; anda third portion that contacts the second region of the source region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region of the well region where a channel is formed through the gate insulating film.