| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
In a bipolar transistor, a collector layer includes three semiconductor layers: an n-type GaAs layer (Si concentration: about 5×1015 cm−3, thickness: about 350 nm), a p-type GaAs layer (C concentration: about 4.5×1015 cm−3, thickness: about 100 nm, sheet concentration: 4.5×1010 cm−2), and an n-type GaAs layer Si concentration: about 5×1015 cm−3, thickness: about 500 nm. The sheet concentration of the p-type GaAs layer is set to less than 1×1011 cm−2. |
| 申请公布号 |
US2016133732(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614988016 |
申请日期 |
2016.01.05 |
| 申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
UMEMOTO Yasunari;KUROKAWA Atsushi;SAIMEI Tsunekazu |
| 分类号 |
H01L29/737;H01L29/10;H01L29/205;H01L29/08 |
主分类号 |
H01L29/737 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a collector layer, a base layer formed on the collector layer, and an emitter layer formed on the base layer,wherein
the collector layer includes:
first-conductivity-type semiconductor layers, andat least one second-conductivity-type semiconductor layer, and the second-conductivity-type semiconductor layer has a total sheet concentration set to less than 1×1011 cm−2. |
| 地址 |
Kyoto-fu JP |
