| 主权项 |
1. A bipolar junction transistor comprising:
a common base region; a plurality of emitter regions disposed in the common base region and arrayed to be spaced apart from each other in a first diagonal direction; and a plurality of collector regions disposed in the common base region and arrayed to be spaced apart from each other in the first diagonal direction, wherein the plurality of emitter regions and the plurality of collector regions are alternately arrayed in a second diagonal direction, wherein the common base region includes a high concentration base region disposed between sidewalls of the plurality of emitter regions and the plurality of collector regions, and a low concentration base region surrounding the high concentration base region, the plurality of emitter regions, and the plurality of collector regions, and wherein a first side of the high concentration base region is directly contacted to the collector region, and a second side of the high concentration base region is directly contacted to the emitter region. |
