FIN-FET STRUCTURE AND METHOD OF MANUFACTURING SAME

摘要

A method for fabricating a FinFET DEVICE is provided in the invention, comprising: a. providing a substrate (100);b. forming a fin (200) on the substrate (200); c. depositing a doping material layer (300) on the semiconductor structure formed after the step b; d. forming a first shallow trench isolation (400) on the semiconductor formed after the step c; e. removing a portion of the doping material layer (300) which is not covered by the first shallow trench isolation (400); f. performing an annealing process to form a doped region (500) in a channel region which is in the middle portion of the fin; g. forming a second shallow trench isolation (600) on the semiconductor formed after the step f; h. forming a source region and a drain region in opposite portions of the fin and forming a gate stack on the middle portion of the fin. Comparing with the prior art, punch through effect will be restrained and process complexity will be reduced.

主权项

1. A method of fabricating a FinFET device, comprising:
a. providing a substrate (100); b. forming a fin (200) on the substrate (100); c. depositing a doping material layer (300) on the semiconductor structure formed after the step b; d. forming a first shallow trench isolation (400) on the semiconductor structure formed after the step c; e. removing a portion of the doping material layer (300) which is not covered by the first shallow trench isolation (400); f. performing an anneal process to form a doped region (500) in a channel region which is in the middle of the fin; g. forming a second shallow trench isolation (600) on the semiconductor structure formed after the step f; h. forming a source region and a drain region in both ends of the fin and forming a gate stack on the middle portion of the fin.