发明名称 |
ORGANIC LIGHT-EMITTING DIODE DISPLAY HAVING MULTI-MODE CAVITY STRUCTURE |
摘要 |
An organic light-emitting diode (OLED) display can include a substrate configured to have an emission area and a non-emission area defined in the substrate; a thin film transistor disposed in the non-emission area; a first storage capacitor electrode and a second storage capacitor electrode configured to be overlapped in the emission area with a passivation layer interposed between the first and the second storage capacitor electrodes; an overcoat layer configured to cover the thin film transistor and the second storage capacitor electrode; and a first pixel area configured to comprise a first anode electrode and an insulating layer sequentially stacked on the overcoat layer in such a way as to overlap the second storage capacitor electrode and a second anode electrode disposed on the insulating layer and configured to come in contact with the thin film transistor and the first anode electrode. |
申请公布号 |
US2016133681(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201514937376 |
申请日期 |
2015.11.10 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
NAM Kyoungjin;KIM Yongmin;KIM Jeongoh;BEAK Jungsun;YUN Jeonggi |
分类号 |
H01L27/32;H01L51/52;H01L51/56 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. An organic light-emitting diode (OLED) display, comprising:
a substrate configured to have an emission area and a non-emission area defined in the substrate; a thin film transistor disposed in the non-emission area; a first storage capacitor electrode and a second storage capacitor electrode configured to be overlapped in the emission area with a passivation layer interposed between the first and second storage capacitor electrodes; an overcoat layer configured to cover the thin film transistor and the second storage capacitor electrode; and a first pixel area configured to include a first anode electrode and an insulating layer sequentially stacked on the overcoat layer in such a way as to overlap the second storage capacitor electrode and a second anode electrode disposed on the insulating layer and configured to come in contact with the thin film transistor and the first anode electrode. |
地址 |
SEOUL KR |