发明名称 TRANSFER ARM FOR FILM FRAME SUBSTRATE HANDLING DURING PLASMA SINGULATION OF WAFERS
摘要 Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch apparatus includes a plasma etch chamber. The plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber, a cathode assembly disposed below the plasma source, and a support pedestal for supporting a substrate carrier below the plasma source. The plasma etch apparatus also includes a transfer chamber coupled to the plasma etch chamber. The transfer chamber includes a transfer arm for supporting a substantial portion of a dicing tape of the substrate carrier, the transfer arm configured to transfer a sample from the support pedestal following an etch singulation process.
申请公布号 US2016133519(A1) 申请公布日期 2016.05.12
申请号 US201414536318 申请日期 2014.11.07
申请人 Holden James M.;Lerner Alexander N.;Kumar Ajay;Eaton Brad;Iyer Aparna 发明人 Holden James M.;Lerner Alexander N.;Kumar Ajay;Eaton Brad;Iyer Aparna
分类号 H01L21/78;H01L21/677;H01L21/67;H01L21/683;H01L21/3065;H01L21/308 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising: providing the semiconductor wafer on a substrate carrier, the substrate carrier having a dicing tape supporting the semiconductor wafer and a tape frame disposed above and surrounding the dicing tape; providing a patterned mask above the semiconductor wafer, the patterned mask covering and protecting the integrated circuits and exposing regions of the semiconductor wafer between the integrated circuits; transferring the substrate carrier having the semiconductor wafer thereon to a processing region of an etch chamber; plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits; and transferring the substrate carrier having the singulated integrated circuits thereon from the processing region of the etch chamber using a transfer arm that supports a substantial portion of the dicing tape of the substrate carrier, wherein transferring the substrate carrier from the processing region of the etch chamber comprises cooling the dicing tape by actively cooling the transfer arm.
地址 San Jose CA US
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