| 发明名称 |
METHODS FOR ETCHING SUBSTRATE AND SEMICONDUCTOR DEVICES |
| 摘要 |
A method of etching a substrate using a metal-assisted chemical etching process is provided. The method may include forming a metal catalytic layer to a predetermined thickness on a substrate and reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate. When the metal catalytic layer is reacted with an etching solution, a porous surface may be formed on the metal catalytic layer. |
| 申请公布号 |
US2016133478(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514835513 |
申请日期 |
2015.08.25 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
OH Jungwoo;SONG Yunwon;KI Bugeun;CHOI Keorock |
| 分类号 |
H01L21/306;H01L21/3205;H01L29/20 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of etching a substrate using a metal-assisted chemical etching process, the method comprising:
forming a metal catalytic layer to a predetermined thickness on a substrate; and reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate. |
| 地址 |
Seoul KR |
