| 发明名称 |
METHOD TO GROW A SEMI-CONDUCTING SIC LAYER |
| 摘要 |
A method to grow a semi insulating SiC layer. The method may include growing the semi insulating SiC layer on a substrate, and creating deep defects in the grown semi insulating SiC layer, whereby a semi insulating property is created in the grown semi insulating SiC layer. Alternatively, the method may include growing a semi insulating SiC layer, creating deep defects in the grown semi insulating SiC layer, whereby the semi insulating property is created in the grown semi insulating SiC layer, and using source material during the growth such that the semi insulating SiC layer is made isotope enriched. |
| 申请公布号 |
US2016133461(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414902170 |
申请日期 |
2014.06.27 |
| 申请人 |
JANZÉN Erik;KORDINA Olof |
发明人 |
Janzén Erik;Kordina Olof;Forsberg Urban |
| 分类号 |
H01L21/02;H01L29/66;H01L21/304 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to grow a semi insulating SiC layer, the method comprising:
A) growing the semi insulating SiC layer on a substrate, and creating deep defects in the grown semi insulating SiC layer, whereby a semi insulating property is created in the grown semi insulating SiC layer, or B) growing a semi insulating SiC layer, creating deep defects in the grown semi insulating SiC layer, whereby the semi insulating property is created in the grown semi insulating SiC layer, and using source material during the growth such that the semi insulating SiC layer is made isotope enriched. |
| 地址 |
Linköping SE |
