ADJUSTMENT OF VUV EMISSION OF A PLASMA VIA COLLISIONAL RESONANT ENERGY TRANSFER TO AN ENERGY ABSORBER GAS

摘要

Disclosed are methods of adjusting the emission of vacuum ultraviolet (VUV) radiation from a plasma in a semiconductor processing chamber. The methods may include generating a plasma in the processing chamber which includes a VUV-emitter gas and a collisional energy absorber gas, and adjusting the emission of VUV radiation from the plasma by altering the concentration ratio of the VUV-emitter gas to collisional energy absorber gas in the plasma. In some embodiments, the VUV-emitter gas may be helium and the collisional energy absorber gas may be neon, and in certain such embodiments, adjusting VUV emission may include flowing helium and/or neon into the processing chamber in a proportion so as to alter the concentration ratio of helium to neon in the plasma. Also disclosed are apparatuses which implement the foregoing methods.

主权项

1. A method of adjusting the emission of vacuum ultraviolet (VUV) radiation from a plasma in a semiconductor processing chamber, the method comprising:
generating a plasma in the processing chamber, the plasma comprising a VUV-emitter gas and a collisional energy absorber gas, the plasma emitting VUV radiation; and adjusting the emission of VUV radiation from the plasma by altering the concentration ratio of the VUV-emitter gas to collisional energy absorber gas in the plasma.