| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve a small occupation area, high integration and large storage capacity.SOLUTION: A semiconductor device uses a multivalued memory cell which has a read transistor having a back gate electrode and a write transistor. Writing of information is performed by turning on the write transistor to supply potential corresponding to the information to a node to which either one of a source electrode or a drain electrode of the write transistor and a gate electrode of the read transistor are electrically connected, and subsequently turning off the write transistor thereby to make the node hold predetermined potential. Reading of information is performed by supplying read control potential to a control signal line connected to either one of the source electrode or the drain electrode of the read transistor, and subsequently detecting a change in potential of a read signal line.SELECTED DRAWING: Figure 1 |
