Low light failure, high power led street lamp and method for manufacturing the same

摘要

A low light failure high power LED street lamp and a manufacturing method therefor. Color mark is made on tail end of N-type semiconductor element (6) or P-type semiconductor element (7); then N-type and P-type semiconductor element (6, 7) are arranged in matrix manner between upper beryllium-oxide ceramic wafer (8) and lower beryllium-oxide ceramic wafer (9), so that head end of N-type semiconductor element (6) is connected with tail end of P-type semiconductor element (7) or tail end of N-type semiconductor element (6) is connected with head end of P-type semiconductor element (7), then lower beryllium-oxide ceramic wafer (9) is attached, through graphene thermal conductive greaseon layer (4), on backside of circuit board (2) which is mounted with LED bulbs (3), and heat sink (15) is mounted on upper beryllium-oxide ceramic wafer (8), then circuit board (2) together with heat sink (15) are mounted into street lamp housing (1).

主权项

1. A method for manufacturing a low light failure, high power LED street lamp, comprising: adopting an N-type semiconductor element and a P-type semiconductor element as cooling elements for heat dissipation of a circuit board mounted with an LED bulb, wherein, when adopting the N-type semiconductor element and P-type semiconductor element as the cooling elements, processing a crystal bar for manufacturing the N-type semiconductor element or the P-type semiconductor element in advance to be a cone shaped crystal bar with one end bigger and the other end smaller, then cutting the cone shaped crystal bar into slices to obtain wafers with the same thickness, in which the surface with a smaller diameter is regarded as a head end and the surface with a larger diameter is regarded as a tail end, making a color mark on the tail end surface for each wafer; then cutting and granulating the conical surface of each wafer to the same polygonal cylinder shapes, wherein the semiconductor with the polygonal cylinder shape is the N-type or P-type semiconductor element with the head end and the tail end, then arranging the N-type semiconductor element and P-type semiconductor element in a manner of matrix between an upper beryllium-oxide ceramic wafer and a lower beryllium-oxide ceramic wafer, both the upper beryllium-oxide ceramic wafer and the lower beryllium-oxide ceramic wafer are provided with a conductive circuit, so that the N-type semiconductor element and the P-type semiconductor element in each column are connected in series, when connecting in series, the head end of the N-type semiconductor element is connected with the tail end of the P-type semiconductor element or the tail end of the N-type semiconductor element is connected with the head end of the P-type semiconductor element, then attaching the lower beryllium-oxide ceramic wafer, through a graphene thermal conductive greaseon layer, on the backside of the circuit board which is mounted with the LED bulb, and mounting a heat sink on the upper beryllium-oxide ceramic wafer, then mounting the circuit board together with the heat sink into a street lamp housing.