| 发明名称 |
HIGH-FREQUENCY AMPLIFIER |
| 摘要 |
A high-frequency module, includes a circuit substrate, a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit. The first transistor, the second transistor, the series circuit and the second resistive element are arranged on the circuit substrate. |
| 申请公布号 |
US2016134244(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514935668 |
申请日期 |
2015.11.09 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
TAKENAKA Isao |
| 分类号 |
H03F1/02;H03F3/193;H03F1/32 |
主分类号 |
H03F1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high-frequency module, comprising:
a circuit substrate; a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit, wherein the first transistor, the second transistor, the series circuit and the second resistive element are arranged on the circuit substrate. |
| 地址 |
Tokyo JP |
