SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND BAFFLE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a semiconductor device manufacturing method and a baffle structure, which produce high-density plasma and achieve high throughput in substrate processing when compared to the conventional apparatus.SOLUTION: A substrate processing apparatus comprises: a reaction container 431; a coil 432 provided around an outer periphery of a side wall of the reaction container; a gas introduction port 433 provided on an upper edge of the reaction container; a baffle part 460 provided between the gas introduction port and an upper limit of the coil; a substrate processing chamber 445 provided in a lower limit direction of the reaction container; and a gas exhaust part 482 connected to the substrate processing chamber. A top face of the baffle part forms a first clearance between an outer edge of the top face of the baffle part and an inner periphery of the side wall of the reaction container, and an under surface of the baffle part forms a second clearance between an outer edge of the under surface of the baffle part and the internal periphery of the side wall near the upper limit of the coil.SELECTED DRAWING: Figure 3