发明名称 SEMICONDUCTOR PACKAGE WITH EMBEDDED COMPONENT AND MANUFACTURING METHOD THEREOF
摘要 The present disclosure relates to a semiconductor package and method of making the same. The semiconductor package includes an encapsulation layer, a dielectric layer, a component, and a first patterned conductive layer. The encapsulation layer has a first surface. The component is within the encapsulation layer and has a front surface and a plurality of pads on the front surface. The dielectric layer is on the first surface of the encapsulation layer, and defines a plurality of via holes; wherein the plurality of pads of the component are against the dielectric layer; and wherein the dielectric layer has a second surface opposite the first surface of the encapsulation layer. Each of plurality of via holes extends from the second surface of the dielectric layer to a respective one of the plurality of the pads. The first patterned conductive layer is within the dielectric layer and surrounds the via holes.
申请公布号 US2016133537(A1) 申请公布日期 2016.05.12
申请号 US201414536253 申请日期 2014.11.07
申请人 Advanced Semiconductor Engineering, Inc. 发明人 Shih Yu-Lin;Lee Chih-Cheng
分类号 H01L23/31;H01L21/56;H01L21/288;H01L21/768;H01L23/532;H01L23/00;H01L23/48 主分类号 H01L23/31
代理机构 代理人
主权项 1. A semiconductor package comprising: an encapsulation layer having a first surface; a component within the encapsulation layer, the component having a front surface and comprising a plurality of pads on the front surface; a dielectric layer on the first surface of the encapsulation layer, the dielectric layer defining a plurality of via holes; wherein the plurality of pads of the component are against the dielectric layer; and wherein the dielectric layer has a second surface opposite the first surface of the encapsulation layer, and each of the plurality of via holes extends from the second surface of the dielectric layer to a respective one of the plurality of pads; and a first patterned conductive layer within the dielectric layer and surrounding the via holes.
地址 Kaohsiung TW