发明名称 |
SEMICONDUCTOR PACKAGE WITH EMBEDDED COMPONENT AND MANUFACTURING METHOD THEREOF |
摘要 |
The present disclosure relates to a semiconductor package and method of making the same. The semiconductor package includes an encapsulation layer, a dielectric layer, a component, and a first patterned conductive layer. The encapsulation layer has a first surface. The component is within the encapsulation layer and has a front surface and a plurality of pads on the front surface. The dielectric layer is on the first surface of the encapsulation layer, and defines a plurality of via holes; wherein the plurality of pads of the component are against the dielectric layer; and wherein the dielectric layer has a second surface opposite the first surface of the encapsulation layer. Each of plurality of via holes extends from the second surface of the dielectric layer to a respective one of the plurality of the pads. The first patterned conductive layer is within the dielectric layer and surrounds the via holes. |
申请公布号 |
US2016133537(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201414536253 |
申请日期 |
2014.11.07 |
申请人 |
Advanced Semiconductor Engineering, Inc. |
发明人 |
Shih Yu-Lin;Lee Chih-Cheng |
分类号 |
H01L23/31;H01L21/56;H01L21/288;H01L21/768;H01L23/532;H01L23/00;H01L23/48 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor package comprising:
an encapsulation layer having a first surface; a component within the encapsulation layer, the component having a front surface and comprising a plurality of pads on the front surface; a dielectric layer on the first surface of the encapsulation layer, the dielectric layer defining a plurality of via holes; wherein the plurality of pads of the component are against the dielectric layer; and wherein the dielectric layer has a second surface opposite the first surface of the encapsulation layer, and each of the plurality of via holes extends from the second surface of the dielectric layer to a respective one of the plurality of pads; and a first patterned conductive layer within the dielectric layer and surrounding the via holes. |
地址 |
Kaohsiung TW |