METHOD OF FABRICATING INTEGRATED CIRCUIT

摘要

A method of fabricating an integrated circuit includes the following steps. A first reticle is used to form a first pattern and a first alignment mark and a second reticle is used to form a second pattern and a second alignment mark in a same layer. A third reticle is aligned to the first alignment mark and the second alignment mark, to obtain an overlay correction value; additionally, a third reticle is aligned to the first alignment mark to obtain a first overlay correction value, a third reticle is aligned to the second alignment mark to obtain a second overlay correction value, and a total overlay correction value is obtained by trading off the first overlay correction value and the second overlay correction value. The third reticle is used to form a third pattern by aligning the third reticle with the total overlay correction value.

主权项

1. A method of fabricating an integrated circuit, comprising:
using a first reticle to form a first pattern and a first alignment mark and using a second reticle to form a second pattern and a second alignment mark; aligning a third reticle to the first alignment mark and the second alignment mark, to obtain an overlay correction value; and using the third reticle to form a third pattern through a lithography apparatus by aligning the third reticle with the overlay correction value.