| 发明名称 |
METHOD FOR PRODUCING SiC SUBSTRATE |
| 摘要 |
A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater. |
| 申请公布号 |
US2016133465(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414898501 |
申请日期 |
2014.06.17 |
| 申请人 |
SHOWA DENKO K.K. |
发明人 |
SASAKI Yuzo |
| 分类号 |
H01L21/04;H01L21/02;H01L21/306 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing an SiC substrate that includes a step of polishing surfaces of the SiC substrate, wherein the method comprises at least:
a CMP step of subjecting both a Si surface and a C surface of the SiC substrate to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater. |
| 地址 |
Tokyo JP |
