METHOD FOR FORMING COBALT CONTAINING FILMS

摘要

Vapor deposition methods of cobalt-containing films by using cobalt carbonyl nitrosyl are disclosed.

主权项

1. A method of forming a cobalt-containing layer on a substrate contained in a reactor, the method comprising:
heating the substrate to a temperature ranging from approximately 30° C. to approximately 300° C.; producing a nucleation layer on the substrate by a first vapor deposition process having a first deposition rate below 2 nm/min by introducing a vapor of Co(CO)3(NO) and a reducing gas into the reactor; and producing a remaining portion of the cobalt-containing layer on the nucleation layer by a second vapor deposition process having a second deposition rate greater than 2 nm/min by introducing the vapor of Co(CO)3(NO) and the reducing gas into the reactor, wherein the first deposition rate increases to the second deposition rate by increasing the temperature of the substrate, by increasing a partial pressure of the vapor of Co(CO)3(NO), by increasing a pressure of the reactor, and/or by changing from a sequential first vapor deposition process to a non-sequential second vapor deposition process.