| 摘要 |
This semiconductor device is provided with a semiconductor switching element that has: first and second gate electrodes (15a, 15b) that are disposed by having a gate insulating film (14) therebetween, said gate insulating film being on a base layer (12) between a first impurity region (16, 41) and a drift layer (11); a second impurity region (21, 43); and electrodes (19, 22). The semiconductor device is also provided with a FWD element configured from the base layer and the drift layer. An inversion layer is formed in the base layer that faces the first gate electrode, and a first voltage, with which the inversion layer is formed up to an intermediate position in the base layer facing the second gate electrode, and a second voltage, with which the inversion layer is not formed in the base layer, are defined. At the time of flowing a current in the semiconductor switching element, the first voltage is applied to the first gate electrode, and the first or the second voltage is applied to the second gate electrode. At the time of interrupting a current flowing in the FWD element, the second voltage is applied to the first gate electrode, and the first voltage is applied to the second gate electrode. |
