| 摘要 |
The present invention relates to a semiconductor device and an operating method thereof for performing a read operation without using flag cells where LSB/MSB completion data are stored. The operating method of a semiconductor device of the present invention includes the steps of: applying a read voltage to a selected word line of a memory block selected from a plurality of memory blocks including cell strings coupled between bit lines and a source line; generating a reference voltage corresponding to the selected memory block; detecting a voltage of the source line by forming a channel in cell strings of the selected memory block; comparing the voltage of the source line with the reference voltage; and performing a least significant bit (LSB) read operation on memory cells coupled to the selected word line when the voltage of the source line is greater than the reference voltage, while performing a most significant bit (MSB) read operation on the memory cells when the voltage of the source line is equal to or less than the reference voltage, as the result of the comparing. |
