| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which achieve higher sensitivity and inhibition of a residual image.SOLUTION: A photoelectric conversion device comprises: a photoelectric conversion element having a P-type first semiconductor region and an N-type second semiconductor region which forms PN junction with the first semiconductor region; and a read circuit for reading charge produced by the photoelectric conversion element. When assuming that a distance between the first semiconductor region and one point in the second semiconductor region, which is farthest from the first semiconductor region and along a direction perpendicular to a surface of a semiconductor substrate is L1 and a distance along a direction parallel with the surface of the semiconductor substrate is L2 in which L1 and L2 have a relation represented as L1≤L2, and when assuming that an impurity concentration of the second semiconductor region is Nand a diffusion coefficient of holes is D, there exists a relation represented as N≤7.1×10(D/L2×3.5×10-1).SELECTED DRAWING: Figure 2 |
