发明名称 FAST HIGH-SIDE POWER FET GATE SENSE CIRCUIT FOR HIGH VOLTAGE APPLICATIONS
摘要 A circuit for sensing gate voltage of a power FET. A switching circuit includes a switching FET having a high voltage rating, its drain coupled to the gate of the power FET, and its source coupled to an output node. A first feedback loop is coupled to the gate of the switching FET to facilitate sensing rising gate voltage. A second feedback loop is coupled to the gate of the switching FET to facilitate sensing falling gate voltage.
申请公布号 US2016134184(A1) 申请公布日期 2016.05.12
申请号 US201614989387 申请日期 2016.01.06
申请人 Texas Instruments Incorporated 发明人 Li Zheng;Chan Wai Cheong
分类号 H02M1/38;G01R19/00 主分类号 H02M1/38
代理机构 代理人
主权项 1. A circuit for sensing voltage at a gate of a power FET, comprising: an input node coupled to the gate of the power FET; an output node; and a switching circuit coupled between the input node and the output node, the switching circuit configured to generate a gate sense signal at the output node, the switching circuit including: a first feedback loop to facilitate a rising gate voltage transition,a second feedback loop to facilitate a falling gate voltage transition, anda first switching FET having a high-voltage rating, and having a drain coupled to the input node; a source coupled to the output node; and a gate coupled to the first and second feedback loops.
地址 Dallas TX US