发明名称 |
FAST HIGH-SIDE POWER FET GATE SENSE CIRCUIT FOR HIGH VOLTAGE APPLICATIONS |
摘要 |
A circuit for sensing gate voltage of a power FET. A switching circuit includes a switching FET having a high voltage rating, its drain coupled to the gate of the power FET, and its source coupled to an output node. A first feedback loop is coupled to the gate of the switching FET to facilitate sensing rising gate voltage. A second feedback loop is coupled to the gate of the switching FET to facilitate sensing falling gate voltage. |
申请公布号 |
US2016134184(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201614989387 |
申请日期 |
2016.01.06 |
申请人 |
Texas Instruments Incorporated |
发明人 |
Li Zheng;Chan Wai Cheong |
分类号 |
H02M1/38;G01R19/00 |
主分类号 |
H02M1/38 |
代理机构 |
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代理人 |
|
主权项 |
1. A circuit for sensing voltage at a gate of a power FET, comprising:
an input node coupled to the gate of the power FET; an output node; and a switching circuit coupled between the input node and the output node, the switching circuit configured to generate a gate sense signal at the output node, the switching circuit including:
a first feedback loop to facilitate a rising gate voltage transition,a second feedback loop to facilitate a falling gate voltage transition, anda first switching FET having a high-voltage rating, and having a drain coupled to the input node; a source coupled to the output node; and a gate coupled to the first and second feedback loops. |
地址 |
Dallas TX US |