| 发明名称 |
RANDOM TELEGRAPH SIGNAL NOISE REDUCTION SCHEME FOR SEMICONDUCTOR MEMORIES |
| 摘要 |
Embodiments are provided that include a method including providing a first voltage to a memory cell prior to an operation, wherein a magnitude of the first voltage is approximately 5 volts. The method further includes providing a second voltage to the memory cell during the operation, wherein a magnitude of the second voltage is in the range of approximately 1.0 and 1.5 volts. The method also includes determining a state of the memory cell after providing the first voltage and the second voltage. |
| 申请公布号 |
US2016133332(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614997278 |
申请日期 |
2016.01.15 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Tanzawa Toru |
| 分类号 |
G11C16/26;G11C16/34 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a first voltage to a memory cell prior to an operation, wherein a magnitude of the first voltage is approximately 5 volts; providing a second voltage to the memory cell during the operation, wherein a magnitude of the second voltage is in the range of approximately 1.0 and 1.5 volts; and determining a state of the memory cell after providing the first voltage and the second voltage. |
| 地址 |
Boise ID US |
