| 主权项 |
1. A nonvolatile memory device comprising:
a power-on reset signal generation unit suitable for receiving a power supply voltage, and generating a power-on reset signal that changes based on the power supply voltage; and a discharging signal generation unit suitable for generating a discharging signal for discharging a word line that is activated earlier than an activation timing of the power-on reset signal when the power supply voltage decreases, wherein the power-on reset signal generation unit comprises: a voltage level detection section suitable for detecting the level of the power supply voltage, and outputting an internal power-on reset signal when the power supply voltage reaches a predetermined voltage, and wherein the voltage level detection section outputs the internal power-on reset signal when the power supply voltage is equal to or greater than a preset level during power-on, and outputs the internal power-on reset signal when the power supply voltage is equal to or less than the preset level during power-down. |
