发明名称 TEMPERATURE DETECTION CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a temperature detection circuit and a semiconductor device with which it is possible to reduce a circuit scale and cut back on power consumption even when hysteresis is imparted to temperature determination.SOLUTION: Provided is a temperature detection circuit 81 comprising: a reference voltage circuit 10 for generating a reference voltage; a temperature characteristic imparting circuit 40 for generating a temperature characteristic voltage in which a temperature characteristic is imparted to the reference voltage; a bias circuit 41 for generating the bias voltage of a transistor on the basis of the temperature characteristic voltage; a determination circuit 50 having an input unit 51 to which the bias voltage is inputted, and an output unit for outputting the result of determination made on the basis of a forward voltage between the base and emitter of the transistor to the effect that the temperature corresponding to the temperature characteristic voltage has reached a prescribed temperature; and a hysteresis circuit 60, connected between the input unit and the output unit, for imparting hysteresis to the determination made by the determination circuit 50.SELECTED DRAWING: Figure 4
申请公布号 JP2016075594(A) 申请公布日期 2016.05.12
申请号 JP20140206580 申请日期 2014.10.07
申请人 MITSUMI ELECTRIC CO LTD 发明人 TAKANO YOICHI;MAKI SHINICHIRO
分类号 G01K7/01;H01L21/822;H01L27/04;H02M3/00 主分类号 G01K7/01
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