METHODS OF FORMING A COMBINED GATE AND SOURCE/DRAIN CONTACT STRUCTURE AND THE RESULTING DEVICE

摘要

One method disclosed herein includes, among other things, forming a gate cap layer above a recessed final gate structure and above recessed sidewall spacers, forming a recessed trench silicide region that is conductively coupled to the first source/drain region, the recessed trench silicide region having an upper surface that is positioned at a level that is below the recessed upper surface of the sidewall spacers, forming a combined contact opening in at least one layer of material that exposes a conductive portion of the recessed final gate structure and a portion of the trench silicide region, and forming a combined gate and source/drain contact structure in the combined contact opening.

主权项

1. A method of forming a transistor comprising a gate structure and a first source/drain region, the method comprising:
performing at least one recess etching process so as to recess a final gate structure and to recess sidewall spacers positioned adjacent said final gate structure, wherein a recessed upper surface of said final gate structure is positioned at a level that is below a level of a recessed upper surface of said sidewall spacers; forming a gate cap layer above said recessed final gate structure and above said recessed sidewall spacers; after forming said gate cap layer, forming a recessed trench silicide region that is conductively coupled to said first source/drain region, said recessed trench silicide region having an upper surface that is positioned at a level that is below said recessed upper surface of said sidewall spacers; forming at least one layer of material above said recessed trench silicide region and above said gate cap layer; forming a combined contact opening in said at least one layer of material that exposes a conductive portion of said recessed final gate structure and a portion of said trench silicide region; and performing at least one process operation to form a combined gate and source/drain contact structure in said combined contact opening, said combined gate and source/drain contact structure conductively coupling said recessed final gate structure to said recessed trench silicide region.