发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE THEREOF HAVING GUARD RING STRUCTURE
摘要 In some embodiments, an integrated circuit (IC) device includes a substrate having a first functional region, a second functional region and a third functional region. The IC device also includes a plurality of dielectric layers over the substrate, a first guard ring in the plurality of dielectric layers and around the first functional region, and a second guard ring in the plurality of dielectric layers and around the second functional region. The second guard ring is separate from the first guard ring, and the third functional region is free of a guard ring. The IC device further includes a seal ring in the plurality of dielectric layers. The seal ring encircles the first and the second guard rings, and is separate from the first and the second guard rings.
申请公布号 US2016133583(A1) 申请公布日期 2016.05.12
申请号 US201614996889 申请日期 2016.01.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Hsien-Wei;Wu Nien-Fang;Kuo Hung-Yi;Chen Jie;Chen Ying-Ju;Yu Tsung-Yuan
分类号 H01L23/58;H01L21/768;H01L21/82;H01L23/522;H01L23/528 主分类号 H01L23/58
代理机构 代理人
主权项 1. An integrated circuit (IC) device comprising: a substrate having a first functional region, a second functional region and a third functional region; a plurality of dielectric layers over the substrate; a first guard ring in the plurality of dielectric layers and around the first functional region; a second guard ring in the plurality of dielectric layers and around the second functional region, wherein the second guard ring is separate from the first guard ring, wherein the third functional region is free of a guard ring; and a seal ring in the plurality of dielectric layers, wherein the seal ring encircles the first and the second guard rings, wherein the seal ring is separate from the first and the second guard rings.
地址 Hsin-Chu TW