| 发明名称 |
METHOD FOR COPPER PLATING THROUGH SILICON VIAS USING WET WAFER BACK CONTACT |
| 摘要 |
A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer. |
| 申请公布号 |
US2016133515(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414896854 |
申请日期 |
2014.05.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GOUK Roman;VERHAVERBEKE Steven |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for depositing a material on a substrate, comprising:
providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture; depositing a metal seed layer on the exposed silicon contact surface at the bottom of the aperture; and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer. |
| 地址 |
Santa Clara CA US |
