RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE

摘要

Provided a resist composition for a semiconductor manufacturing process comprising (A) a compound expressed by General Formula (I) below:;;wherein, in General Formula (I) above, R1 represents an alkyl group, a cycloalkyl group, or an aryl group, R2 represents a univalent organic group, each of R3 to R6 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a halogen atom, R3 and R4, R4 and R5, or R5 and R6 may be bonded to each other to form an alicyclic ring or an aromatic ring, and X represents an oxygen atom or a sulfur atom.

主权项

1. A resist composition for a semiconductor manufacturing process comprising:
(A) a compound expressed by General Formula (I) below: wherein, in General Formula (I) above, R1 represents an alkyl group, a cycloalkyl group, or an aryl group, R2 represents a univalent organic group, each of R3 to R6 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a halogen atom, R3 and R4, R4 and R5, or R5 and R6 may be bonded to each other to form an alicyclic ring or an aromatic ring, and X represents an oxygen atom or a sulfur atom.