Method for manufacturing N-type semiconductor element for cooling or heating device

摘要

Disclosed is a method for manufacturing N-type semiconductor element for cooling or heating device, the N-type semiconductor element is made of tellurium, bismuth and selenium material, firstly, smashing and grinding the tellurium, bismuth and selenium material to be 2000 meshes or more; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. During operation, the temperature difference between the two ends thereof is larger, and through a test, the temperature difference between the cold end and the hot end reaches about 73° C. to 78° C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a semiconductor cooling or heating device.

主权项

1. A method for manufacturing an N-type semiconductor element for a cooling or heating device, wherein, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, the method comprising, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to proportion of each material in parts by weight, proportioning the materials to obtain a mixture, wherein the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium; putting the evenly-mixed mixture in a glass tube for smelting, and drying the glass tube together with the materials for draw-off and vacuum-pumping process, then placing the glass tube with the mixture into a rocking furnace for vacuum rocking smelting at a smelting temperature from 650 to 750° C. with a smelting time of 15 to 25 minutes, taking the glass tube out of the rocking furnace and cooling down naturally to the room temperature; placing vertically the glass tube cooled naturally together with the material in a crystal pulling furnace for a crystal pulling process, at a crystal pulling temperature from 600 to 750° C. at a speed of 2 to 3 cm per hour, a time of crystal pulling is controlled within 16 to 20 hours, then the N-type semiconductor crystal bar is manufactured after completion of the crystal pulling, the N-type semiconductor element is obtained after slicing, cutting and pelletizing the manufactured N-type semiconductor crystal bar.