发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 A semiconductor device and a manufacturing method therefor. The semiconductor device comprises an active region and a passive region. The active region comprises multiple active region units. The multiple active region units are arranged in the length direction of the semiconductor device in a staggered manner, and are arranged in the width direction of the semiconductor device in a staggered manner. By means of the semiconductor device, the overall length is increased, the heat dissipation area is increased, the heat dissipation is quickened, and the internal temperature in the semiconductor device is uniformly distributed; the width-to-length ratio of the entire semiconductor device is reduced, the influence of increase of the width-to-length ratio on the performance of the device is reduced, and the subsequent process difficulty can also be lowered.
申请公布号 WO2016070463(A1) 申请公布日期 2016.05.12
申请号 WO2014CN91422 申请日期 2014.11.18
申请人 GPOWER SEMICONDUCTOR, INC. 发明人 ZHANG, NAIQIAN;LIU, FEIHANG;PEI, YI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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