BOTTOM-UP ELECTROLYTIC VIA PLATING METHOD

摘要

Disclosed herein is a bottom-up electrolytic via plating method wherein a first carrier substrate (100) and a second substrate (110) having at least one through-via (120) are temporarily bonded together. The method includes applying a seed layer (108) on a surface of the first substrate, forming a surface modification layer (114) on the seed layer or the second substrate, bonding the second substrate to the first substrate with the surface modification layer to create an assembly wherein the seed layer and the surface modification layer are disposed between the first and second substrates, applying conductive material (122) to the through-via, removing the second substrate having the through-via containing conductive material from the assembly.