| 发明名称 |
DEVICE FOR DETECTING A LASER ATTACK IN AN INTEGRATED CIRCUIT CHIP |
| 摘要 |
A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate. |
| 申请公布号 |
US2016133582(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514686908 |
申请日期 |
2015.04.15 |
| 申请人 |
STMicroelectronics (Rousset) SAS |
发明人 |
Marinet Fabrice;Mercier Julien;Fort Jimmy;Sarafianos Alexandre |
| 分类号 |
H01L23/00;H01L27/092;H01L29/732;H01L27/06 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A circuit, comprising:
a substrate of a first conductivity type; a bipolar transistor of a first type having a buried region within the substrate that is formed of the second conductivity type; wherein the buried region is configured to operate as a detector of variation in current flow between a base of said bipolar transistor and the substrate that are indicative of a laser beam directed at the substrate. |
| 地址 |
Rousset FR |
