AIR GAP STRUCTURE WITH BILAYER SELECTIVE CAP

摘要

A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.

主权项

1. A semiconductor structure comprising:
a dielectric layer present on a semiconductor substrate; one or more conductors within the dielectric layer, wherein the one or more conductors have a top surface; a bilayer cap present on the one or more conductors, wherein the bilayer cap comprises a first layer and a second layer; and a plurality of air gaps, wherein the air gaps are etched into the dielectric layer.