发明名称 PHASE CHANGING ON-CHIP THERMAL HEAT SINK
摘要 A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
申请公布号 US2016133543(A1) 申请公布日期 2016.05.12
申请号 US201614996664 申请日期 2016.01.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAHLSTROM Mattias E.
分类号 H01L23/427;H01L21/48 主分类号 H01L23/427
代理机构 代理人
主权项 1. A method of manufacturing an integrated circuit chip, comprising: forming a heat sink in a substrate by: forming a trench in the substrate;forming a liner on surfaces of the trench;forming a phase change material on the liner and in the trench, wherein the phase change material comprises an alloy having a melting point temperature in a range of about 50° C. to about 100° C.; andforming a cap on the phase change material and in the trench; thinning a backside of the substrate to expose a portion of the liner; and forming a device on a front side of the substrate proximate the heat sink.
地址 Armonk NY US