发明名称 |
PHASE CHANGING ON-CHIP THERMAL HEAT SINK |
摘要 |
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip. |
申请公布号 |
US2016133543(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201614996664 |
申请日期 |
2016.01.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAHLSTROM Mattias E. |
分类号 |
H01L23/427;H01L21/48 |
主分类号 |
H01L23/427 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing an integrated circuit chip, comprising:
forming a heat sink in a substrate by:
forming a trench in the substrate;forming a liner on surfaces of the trench;forming a phase change material on the liner and in the trench, wherein the phase change material comprises an alloy having a melting point temperature in a range of about 50° C. to about 100° C.; andforming a cap on the phase change material and in the trench; thinning a backside of the substrate to expose a portion of the liner; and forming a device on a front side of the substrate proximate the heat sink. |
地址 |
Armonk NY US |